LPC1113 NXP [NXP Semiconductors], LPC1113 Datasheet - Page 44

• Manufacturer Part Number: LPC1113
• Description: 32-bit ARM Cortex-M0 microcontroller; up to 32 kB flash and 8 kB SRAM
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
10. Dynamic characteristics
LPC1111_12_13_14
Product data sheet
10.1 Power-up ramp conditions
10.2 Flash memory
Table 10.
T
[1]
[2]
Table 11.
T
[1]
[2]
Symbol Parameter
t
Symbol
N
t
t
t
t
V
r
wait
ret
er
prog
amb
amb
Fig 23. Power-up ramp
I
endu
See
The wait time specifies the time the power supply must be at levels below 400 mV before ramping up.
Number of program/erase cycles.
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
= 40 C to +85 C.
= 40 C to +85 C, unless otherwise specified.
Figure
Condition: 0 < V
rise time
wait time
input voltage
Power-up characteristics
Flash characteristics
Parameter
endurance
retention time
erase time
programming
time
23.
All information provided in this document is subject to legal disclaimers.
I
 400 mV at start of power-up (t = t
400 mV
Rev. 5 — 22 June 2011
Conditions
at t = t
at t = t
V
DD
0
Conditions
powered
unpowered
sector or multiple
consecutive
sectors
1
1
: 0 < V
on pin V
I
 400 mV
DD
t = t
1
32-bit ARM Cortex-M0 microcontroller
[1]
[2]
1
)
LPC1111/12/13/14
Min
10000
10
20
95
0.95
t
wait
[1][2]
t
r
[1]
002aag001
Min
0
12
0
Typ
100000
-
-
100
1
Typ
-
-
-
© NXP B.V. 2011. All rights reserved.
Max
500
-
400
Max
-
-
-
105
1.05
44 of 64
Unit
ms
s
mV
Unit
cycles
years
years
ms
ms