TE28F200B5T80 INTEL [Intel Corporation], TE28F200B5T80 Datasheet - Page 32

• Manufacturer Part Number: TE28F200B5T80
• Description: SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
• Manufacturer: INTEL [Intel Corporation]

SMART 5 BOOT BLOCK MEMORY FAMILY
5.6
V
NOTES:
1.
2.
3.
4.
5.
32
Boot/Parameter Block Erase Time
Main Block Erase Time
Main Block Write Time (Byte Mode)
Main Block Write Time (Word Mode)
Byte Program Time
Word Program Time
CC
All numbers are sampled, not 100% tested.
Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of V
Typical conditions are 25 °C with V
V
Contact your Intel representative for information regarding maximum byte/word write specifications.
Max program times are guaranteed for the two parameter blocks and 96-KB main block only.
= 5 V ± 10%
CC
= 5.0 V, V
ADDRESSES (A)
CE# (E)
OE# (G)
WE# (W)
DATA (D/Q)
RP#(P)
Erase and Program Timings—Commercial and Extended Temperature
Parameter
V
V
V
V
V
V
V
V
V
V
V
V
PP
OH
OL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
CC
= 12.0 V typically results in a 60% reduction in programming time.
and V
High Z
PP
Temp
V
. See Note 3 for typical conditions.
Figure 15. AC Waveforms for Read Operations
PP
CC
and V
R5
R6
Address Selection
Address Stable
Device and
PP
Typ
5 V ± 10%
at the center of the specified voltage range. Production programming using
R2
Commercial
Max
R7
100
100
14
7
R4
R3
Typ
12 V ± 5%
Valid Output
R1
Max
Data
ADVANCE INFORMATION
Valid
100
100
14
7
Typ
5 V ± 10%
R10
Max
100
100
Extended
14
7
Standby
R8
R9
Typ
12 V ± 5%
High Z
Max
100
100
14
7
Units
s
s
s
s
0599-14
s
s