NAND08GW3C2A NUMONYX [Numonyx B.V], NAND08GW3C2A Datasheet - Page 53

• Manufacturer Part Number: NAND08GW3C2A
• Description: 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

NAND08GW3C2A, NAND16GW3C2A
12.2
Figure 31. Resistor value versus waveform timings for Ready/Busy signal
1. T = 25°C.
Data protection
The Numonyx NAND device is designed to guarantee data protection during power
transitions.
A V
In the V
Low (V
Figure 32. Data protection
DD
detection circuit disables all NAND operations, if V
IL
DD
) to guarantee hardware protection during power transitions as shown in
V DD
range from V
W
Nominal Range
LKO
V LKO
200
150
100
Locked
50
0
to the lower limit of nominal range, the WP pin should be kept
1
1.8
2.4
50
t f
V DD = 3.3 V, C L = 50 pF
2
1.8
100
1.2
R P (K
t r
Locked
3
150
1.8
0.8
ibusy
DD
is below the V
200
4
1.8
2
1
3
4
0.6
DC and AC parameters
Ai11086
LKO
threshold.
Figure 32.
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