NAND08GW3C2A NUMONYX [Numonyx B.V], NAND08GW3C2A Datasheet - Page 16

• Manufacturer Part Number: NAND08GW3C2A
• Description: 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

Signal descriptions
3.7
3.8
3.9
3.10
16/58
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted
Program or Erase operations. When Write Protect is Low, V
any Program or Erase operations.
It is recommended to keep the Write Protect pin Low, V
Ready/Busy (RB
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R
controller is currently active.
When Ready/Busy is Low, V
the operation completes, Ready/Busy goes High, V
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
During power-up and power-down a minimum recovery time of 10 µs is required before the
command interface is ready to accept a command. During this period the Ready/Busy signal
is Low, V
RB
Refer to
calculate the value of the pull-up resistor.
V
V
power supply for operations (Read, Program and Erase).
V
Ground, V
ground.
DD
DD
SS
2
is only available on the NAND16GW3C4A.
provides the power supply to the internal core of the memory device. It is the main
ground
supply voltage
Section 12.1: Ready/Busy signal electrical characteristics
OL
SS,
.
is the reference for the power supply. It must be connected to the system
1
, RB
OL
, a Read, Program or Erase operation is in progress. When
2
)
OH
NAND08GW3C2A, NAND16GW3C2A
.
IL
, during power-up and power-down.
IL
, the device does not accept
for details on how to