NAND08GW3C2A NUMONYX [Numonyx B.V], NAND08GW3C2A Datasheet - Page 23

• Manufacturer Part Number: NAND08GW3C2A
• Description: 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

NAND08GW3C2A, NAND16GW3C2A
Figure 8.
6.4
RB
I/O
R
Row Add 1,2,3
Code
000h
Cmd
Random data output
Page Program
The Page Program operation is the standard operation to program data to the memory
array. Generally, data is programmed sequentially, however, the device does support
random input within a page.
The memory array is programmed by page, however, partial page programming is allowed
where any number of bytes (1 to 2112) can be programmed.
Only one consecutive partial Page Program operation is allowed on the same page. After
exceeding this a Block Erase command must be issued before any further Program
operations can take place in that page.
5 Add cycles
Address
Inputs
(Read Busy time)
Col Add 1,2
tBLBH1
Code
Main Area
30h
Cmd
Busy
Data Output
Spare
Area
Code
Cmd
05h
Col Add 1,2
2Add cycles
Address
Inputs
Code
E0h
Cmd
Main Area
Data Output
Device operations
Spare
Area
ai08658b
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