CBTD3306GM NXP [NXP Semiconductors], CBTD3306GM Datasheet - Page 9

• Manufacturer Part Number: CBTD3306GM
• Description: Dual bus switch with level shifting Multiple package options
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
13. Test information
Table 10.
CBTD3306
Product Specification
Supply voltage
V
Fig 13. Test circuit for measuring switching times
CC
= 5.0 V ± 0.5 V
Test data is given in
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz; Z
The outputs are measured one at a time with one transition per measurement.
Definitions for test circuit:
R
C
R
V
L
L
T
EXT
Test data
= Load resistance.
= Load capacitance including jig and probe capacitance.
= Termination resistance should be equal to output impedance Z
= External voltage for measuring switching times.
Input
V
GND to 3.0 V ≤ 2.5 ns
I
Table
10.
negative
positive
pulse
pulse
0 V
0 V
V
V
t
I
I
r
, t
All information provided in this document is subject to legal disclaimers.
G
f
90 %
10 %
V
I
t
t
Rev. 5 — 28 April 2011
r
f
V
V
M
M
10 %
90 %
Load
C
50 pF
R T
L
V
DUT
CC
t
t
W
W
V
O
R
500 Ω
o
L
of the pulse generator.
C L
V
V
M
M
001aae331
t
t
V
r
f
EXT
R L
R L
V
t
open
Dual bus switch with level shifting
PLH
EXT
, t
PHL
o
t
7.0 V
PLZ
= 50 Ω.
CBTD3306
, t
PZL
© NXP B.V. 2011. All rights reserved.
t
open
PHZ
, t
PZH
9 of 17