CBTD3306GM NXP [NXP Semiconductors], CBTD3306GM Datasheet - Page 4

• Manufacturer Part Number: CBTD3306GM
• Description: Dual bus switch with level shifting Multiple package options
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
10. Static characteristics
Table 7.
Voltages are referenced to GND (ground = 0 V).
[1]
[2]
[3]
CBTD3306
Product Specification
Symbol
V
I
I
V
ΔI
C
C
R
I
CC
IK
pass
I
io(off)
ON
CC
All typical values are at V
This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
Measured by the voltage drop between the nA and the nB terminals at the indicated current through the switch. ON resistance is
determined by the lowest voltage of the two (nA or nB) terminals.
Parameter
input clamping voltage
input leakage current
supply current
pass voltage
additional supply current
input capacitance
off-state input/output
capacitance
ON resistance
Static characteristics
CC
= 5 V, T
amb
Conditions
V
V
V
V
see
per input pin; V
one input at 3.4 V, other inputs at
V
control pin; V
port off; V
V
V
V
= 25 °C.
CC
CC
CC
I
CC
CC
CC
CC
= V
All information provided in this document is subject to legal disclaimers.
Figure 6
= 4.5 V; I
= 5.5 V; V
= 5.5 V; I
or GND
= 4.5 V; V
= 4.5 V; V
= 4.5 V; V
CC
or GND
I
= 3 V or 0 V; nOE = V
Rev. 5 — 28 April 2011
to
I
I
SW
= 3 V or 0 V
I
I
I
I
= −18 mA
CC
= GND or 5.5 V
= 0 V; I
= 0 V; I
= 2.4 V; I
Figure 10
= 0 mA;
= 5.5 V;
I
I
= 64 mA
= 30 mA
I
= 15 mA
CC
[2]
[3]
[3]
[3]
Dual bus switch with level shifting
Min
T
-
-
-
-
-
-
-
-
-
-
amb
= −40 °C to +85 °C
Typ
3.2
6.5
3.6
3.6
17
CC
-
-
-
-
-
CBTD3306
[1]
or GND.
© NXP B.V. 2011. All rights reserved.
Max
−1.2
1.5
2.5
±1
35
5
5
-
-
-
pF
Unit
V
μA
mA
V
mA
pF
Ω
Ω
Ω
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