CY7C1325-50AC CYPRESS [Cypress Semiconductor], CY7C1325-50AC Datasheet - Page 7

• Manufacturer Part Number: CY7C1325-50AC
• Description: 256K x 18 Synchronous 3.3V Cache RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Write Cycle Descriptions
ZZ Mode Electrical Characteristics
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ...................................–65°C to +150°C
Ambient Temperature with
Power Applied ...............................................–55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
Notes:
4.
5.
6.
I
t
t
Read
Read
Write Byte 0 - DQ
Write Byte 1 - DQ
Write All Bytes
Write All Bytes
DDZZ
ZZS
ZZREC
When a write cycle is detected, all I/Os are three-stated, even during byte writes.
Minimum voltage equals –2.0V for pulse durations of less than 20 ns.
T
Parameter
A
is the case temperature.
[5]
...............................................–0.5V to V
[7:0]
[15:8]
DD
Device operation to
ZZ recovery time
Relative to GND................ –0.5V to +4.6V
and DP
standby current
and DP
Snooze mode
Function
Description
ZZ
0
1
[1,2,3,4]
Test Conditions
ZZ > V
ZZ > V
ZZ < 0.2V
DD
DD
DD
+ 0.5V
0.2V
0.2V
7
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Com’l
GW
Range
1
1
1
1
1
0
2t
Min.
CYC
Temperature
0°C to +70°C
Ambient
BWE
[5]
X
........................................... –0.5V to V
1
0
0
0
0
[6]
2t
Max.
10
CYC
3.135V to 3.6V
BWS
V
X
1
1
0
0
X
DD
1
CY7C1325
2.375V to V
Unit
mA
BWS
ns
ns
V
DD
X
X
1
0
1
0
DDQ
+ 0.5V
0
DD