S29PL032J SPANSION [SPANSION], S29PL032J Datasheet - Page 67

• Manufacturer Part Number: S29PL032J
• Description: CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
• Manufacturer: SPANSION [SPANSION]

April 7, 2005 31107A62
Autoselect Command Sequence
Enter SecSi™ Sector/Exit SecSi Sector Command Sequence
Word Program Command Sequence
If DQ5 goes high during a program or erase operation, writing the reset command
returns the banks to the read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
The autoselect command sequence allows the host system to access the manu-
facturer and device codes, and determine whether or not a sector is protected.
The autoselect command sequence may be written to an address within a bank
that is either in the read or erase-suspend-read mode. The autoselect command
may not be written while the device is actively programming or erasing in the
other bank.
The autoselect command sequence is initiated by first writing two unlock cycles.
This is followed by a third write cycle that contains the bank address and the au-
toselect command. The bank then enters the autoselect mode. The system may
read any number of autoselect codes without reinitiating the command sequence.
Table 21
tion information, the system must write to the appropriate bank address (BA) and
sector address (SA).
ated with each sector.
The system must write the reset command to return to the read mode (or
erase-suspend-read mode if the bank was previously in Erase Suspend).
The SecSi Sector region provides a secured data area containing a random, eight
word electronic serial number (ESN). The system can access the SecSi Sector re-
gion by issuing the three-cycle Enter SecSi Sector command sequence. The
device continues to access the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command
sequence returns the device to normal operation. The SecSi Sector is not acces-
sible when the device is executing an Embedded Program or embedded Erase
algorithm.
sequences. See also “SecSi™ (Secured Silicon) Sector Flash Memory Region” for
further information. Note that the ACC function and unlock bypass modes are not
available when the SecSi Sector is enabled.
Programming is a four-bus-cycle operation. The program command sequence is
initiated by writing two unlock write cycles, followed by the program set-up com-
mand. The program address and data are written next, which in turn initiate the
Embedded Program algorithm. The system is not required to provide further con-
trols or timings. The device automatically provides internally generated program
pulses and verifies the programmed cell margin.
data requirements for the program command sequence. Note that the SecSi Sec-
tor, autoselect, and CFI functions are unavailable when a [program/erase]
operation is in progress.
When the Embedded Program algorithm is complete, that bank then returns to
the read mode and addresses are no longer latched. The system can determine
the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to the
"Write Operation Status" section
Any commands written to the device during the Embedded Program Algorithm
are ignored. Note that a hardware reset immediately terminates the program
shows the address and data requirements. To determine sector protec-
Table 21
P R E L I M I N A R Y
shows the address and data requirements for both command
S29PL127J/S29PL129J/S29PL064J/S29PL032J
Table 4
shows the address range and bank number associ-
section for information on these status bits.
Table 21
shows the address and
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