S29PL032J SPANSION [SPANSION], S29PL032J Datasheet - Page 63

no-image

S29PL032J

Manufacturer Part Number
S29PL032J
Description
CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
Manufacturer
SPANSION [SPANSION]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S29PL032J-DC-B
Manufacturer:
SPANSION
Quantity:
1 000
Part Number:
S29PL032J-DC-B
Manufacturer:
SPANSION
Quantity:
20 000
Part Number:
S29PL032J55BF112
Manufacturer:
SPANSION
Quantity:
1 000
Part Number:
S29PL032J55BF112
Manufacturer:
SPANSION
Quantity:
1 000
Part Number:
S29PL032J55BFI020A
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
Part Number:
S29PL032J55BFI120
Manufacturer:
SPANSION
Quantity:
1 200
Part Number:
S29PL032J55BFI120
Manufacturer:
SPANSION
Quantity:
1 000
Part Number:
S29PL032J55BFI120A
Manufacturer:
SPANSION
Quantity:
2 000
Part Number:
S29PL032J55BFI120A
Manufacturer:
SPANSION
Quantity:
1 195
Part Number:
S29PL032J55BFI120E
Manufacturer:
CYPRESS
Quantity:
1 200
Part Number:
S29PL032J60BFI12
Manufacturer:
SPANSION
Quantity:
1 000
Part Number:
S29PL032J60BFI12
Manufacturer:
SPANSION
Quantity:
1 000
Part Number:
S29PL032J60BFI12
Manufacturer:
SPANSION
Quantity:
20 000
Part Number:
S29PL032J60BFI120
Manufacturer:
SPANSION
Quantity:
20 000
Part Number:
S29PL032J60BFI123
Manufacturer:
SPANSION
Quantity:
20 000
April 7, 2005 31107A62
Addresses
Addresses
1Ch
1Dh
2Ch
2Dh
3Ch
1Bh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Ah
2Bh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
007Dh (PL064J)
003Dh (PL032J)
0018h (PL127J)
0018h (PL129J)
0017h (PL064J)
0016h (PL032J)
00FDh (PL127J)
00FDh (PL129J)
0027h
0036h
0000h
0000h
0003h
0000h
0009h
0000h
0004h
0000h
0004h
0000h
0001h
0000h
0000h
0000h
0003h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0000h
0000h
Data
Data
P R E L I M I N A R Y
Table 19. Device Geometry Definition
S29PL127J/S29PL129J/S29PL064J/S29PL032J
Table 18. System Interface String
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
N
byte
PP
PP
N
pin present)
pin present)
times typical
N
times typical (00h = not supported)
N
Description
N
Description
times typical
ms (00h = not supported)
N
N
times typical
N
µ
N
N
ms
s (00h = not supported)
µs
61

Related parts for S29PL032J