S29PL-N_07 SPANSION [SPANSION], S29PL-N_07 Datasheet - Page 71

• Manufacturer Part Number: S29PL-N_07
• Description: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
• Manufacturer: SPANSION [SPANSION]

June 6, 2007 S29PL-N_00_A5
Addresses
Addresses
1Bh
1Ch
1Dh
1Eh
1Fh
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
D a t a
007Dh (PL256N)
003Dh (PL127N)
003Dh (PL129N)
0019h (PL256N)
0018h (PL127N)
0018h (PL129N)
S h e e t
000Bh
0027h
0036h
0000h
0000h
0006h
0009h
0000h
0003h
0003h
0002h
0000h
0001h
0000h
0006h
0000h
0003h
0003h
0000h
0000h
0001h
0000h
0000h
0004h
0003h
0000h
0000h
0001h
Data
Data
S29PL-N MirrorBit
( P r e l i m i n a r y )
Table 13.3 Device Geometry Definition
Table 13.2 System Interface String
V
D7 – D4: volt, D3 – D0: 100 millivolt
V
D7 – D4: volt, D3 – D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (see CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(see the CFI specification or CFI publication 100)
Erase Block Region 2 Information
(see the CFI specification or CFI publication 100)
Erase Block Region 3 Information
(see the CFI specification or CFI publication 100)
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
™
Flash Family
N
byte
PP
PP
N
times typical
pin present)
N
Description
pin present)
Description
N
times typical (00h = not supported)
N
times typical
ms (00h = not supported)
N
N
times typical
N
µs (00h = not supported)
N
N
ms
µs
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