MB5S Fairchild Semiconductor, MB5S Datasheet
MB5S
Manufacturer Part Number
MB5S
Description
(MB1S - MB8S) 0.5 Ampere Glass Passivated Bridge Rectifiers
Manufacturer
Fairchild Semiconductor
Datasheet
1.MB5S.pdf
(3 pages)
ã1999 Fairchild Semiconductor Corporation
Features
•
•
•
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
Maximum Reverse Leakage,
per leg @ rated V
Maximum Forward Voltage Drop,
per bridge
I
Typi cal Junction Capacitance, per leg
I
i
P
R
R
T
T
2
Symbol
f(surge)
O
0.5 Ampere Glass Passivated Bridge Rectifiers
t rating for fusing
Absolute Maximum Ratings*
stg
J
D
qJA
qJL
*
**
Low leakage
Surge overload rating:
35 amperes peak.
Ideal for printed circuit board.
Electrical Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.
V
R
= 4.0 V, f = 1.0 MHz
Parameter
Average Rectified Current
Peak Forward Surge Current
Total Device Dissipation
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Lead,** per leg
Storage Tem perature Range
Operating Junction Tem perature
R
T
T
@ 0.5 A
t < 8.3 ms
@ T
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Derate above 25°C
(Rated V
A
A
= 25°C
= 125°C
A
= 50°C
R
)
Polarity symbols molded
or marking on body
Parameter
SOIC-4
MB1S - MB8S
100
100
1S
70
T
A
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
0.0191(0.5)
200
140
200
0.031(0.8)
2S
1
4
~
––
0.106(2.7)
0.09(2.3)
0.193(4.9)
0.177(4.5)
Device
400
400
280
5.0
0.5
1.0
5.0
4S
13
~
+
3
2
0.014(0.35)
0.006(0.15)
0.051(1.3)
0.035(0.9)
4
1
2
3
:
:
:
: ––
0.057(1.3)
-55 to +150
-55 to +150
0.067(1.7)
~
~
+
Value
600
420
600
6S
0.5
1.4
35
11
85
20
0.027(0.7)
0.043(1.1)
0.275(7)MAX
0.165(4.2)
0.150(3.8)
800
560
800
8S
0.106(2.7)
0.09(2.3)
Dimensions are in:
mW/°C
Units
°C/W
°C/W
inches (mm)
MB1S-MB8S, Rev. A
°C
°C
W
A
A
0.008(0.2)
Units
0.067(1.7)
0.057(1.3)
mA
A
mA
pF
C0.02(0.5)
V
V
V
V
0.118(3.0)
2
t
MAX
Related parts for MB5S
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MB5S Summary of contents
Page 1
... T = 125°C A Maximum Forward Voltage Drop, per bridge @ 0 rating for fusing t < 8.3 ms Typi cal Junction Capacitance, per leg 1.0 MHz R ã1999 Fairchild Semiconductor Corporation MB1S - MB8S 4 –– 0.031(0.8) SOIC-4 0.0191(0.5) Polarity symbols molded 0.106(2.7) 0.09(2.3) or marking on body 0.193(4.9) 0.177(4. 25° ...
Page 2
... AMBIENT TEMPERATURE ( C) Non-Repetitive Surge Current NUMBER OF CYCLES AT 60Hz Glass Passivated Bridge Rectifiers Forward Characteristics 10 1 0.1 0.01 150 175 0.4 0.6 º Reverse Characteristics 100 C 1 0.1 0.01 50 100 0 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) (continued) º ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...