q67040s4717 Infineon Technologies Corporation, q67040s4717 Datasheet - Page 9

• Manufacturer Part Number: q67040s4717
• Description: Igbt In Trench And Fieldstop Technology With Soft, Fast Recovery Anti-parallel Emcon He Diode
• Manufacturer: Infineon Technologies Corporation

Power Semiconductors
Figure 21. IGBT transient thermal resistance
Figure 23. Typical reverse recovery time as
10
10
250ns
200ns
150ns
100ns
50ns
-1
-2
0ns
K/W
K/W
700A/µs
1µs
D=0.5
0.05
di
0.1
0.2
(D = t
a function of diode current slope
(V
Dynamic test circuit in Figure E)
F
/dt,
R
10µs 100µs 1ms
=400V, I
800A/µs
t
p
DIODE CURRENT SLOPE
single pulse
P
/ T)
,
0.01
PULSE WIDTH
0.02
F
=30A,
R
900A/µs 1000A/µs
0.29566
0.25779
0.19382
0.05279
R , ( K / W )
1
C
1
=
1
/ R
T
10ms 100ms
J
1
=175°C
T
C
6.478*10
6.12*10
4.679*10
6.45*10
J
2
=25°C
=
, ( s )
2
/ R
R
2
-3
-5
2
-2
-4
9
TrenchStop Series
Figure 22. Diode transient thermal
Figure 24. Typical reverse recovery charge
10
10
10
2.0µC
1.5µC
1.0µC
0.5µC
0.0µC
-1
-2
0
K/W
K/W
K/W
100ns 1µs 10µs 100µs 1ms 10ms100ms
700A/µs
D=0.5
di
impedance as a function of pulse
width
(D=t
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
0.1
0.2
F
/dt,
R
= 400V, I
P
/T)
single pulse
t
DIODE CURRENT SLOPE
800A/µs
P
,
0.01
PULSE WIDTH
0.02
0.05
F
IKW30N60T
= 30A,
R
0.19517
0.26773
0.31252
0.22545
0.04916
900A/µs
R , ( K / W )
1
C
Rev. 2.1 Dev-04
1
=
1
/ R
1
T
T
J
J
C
1000A/µs
=25°C
=175°C
1.079*10
1.546*10
2.297*10
2.234*10
7.5*10
2
=
, ( s )
2
/ R
-6
R
2
2
-1
-2
-3
-4
q
6