q67040s4717 Infineon Technologies Corporation, q67040s4717 Datasheet - Page 4

• Manufacturer Part Number: q67040s4717
• Description: Igbt In Trench And Fieldstop Technology With Soft, Fast Recovery Anti-parallel Emcon He Diode
• Manufacturer: Infineon Technologies Corporation

Power Semiconductors
Figure 1. Collector current as a function of
Figure 3. Power dissipation as a function of
90A
80A
70A
60A
50A
40A
30A
20A
10A
160W
120W
0A
80W
40W
100H z
0W
25°C
switching frequency
(T
V
case temperature
(T
50°C
f,
GE
T
j
j
T
SWITCHING FREQUENCY
C
1kH z
,
= 0/+15V, R
C
I
I
175 C, D = 0.5, V
175 C)
c
c
=80°C
CASE TEMPERATURE
75°C
T
C
=110°C
100°C 125°C 150°C
10kH z
G
= 10 )
CE
= 400V,
100kH z
4
TrenchStop Series
100A
Figure 2. Safe operating area
Figure 4. Collector current as a function of
0.1A
10A
50A
40A
30A
20A
10A
1A
0A
1V
25°C
V
CE
(D = 0, T
V
case temperature
(V
,
GE
COLLECTOR
T
GE
=15V)
C
10V
,
CASE TEMPERATURE
15V, T
75°C
C
= 25 C, T
-
IKW30N60T
EMITTER VOLTAGE
j
100V
175 C)
Rev. 2.1 Dev-04
DC
j
125°C
175 C;
1000V
t
50µs
10µs
1ms
10ms
p
=2µs
q