q67040s4717 Infineon Technologies Corporation, q67040s4717 Datasheet
q67040s4717
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q67040s4717 Summary of contents
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... jmax IKW30N60T P-TO-247-3-1 (TO-220AC) Package Ordering Code TO-247 Q67040S4717 Value Unit 600 187 W -40...+175 C -55...+175 260 Rev. 2.1 Dev-04 ...
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Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic unless otherwise specified j Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation ...
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Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse ...
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T =80°C C 50A T =110°C C 40A 30A I c 20A I 10A c 0A 100H z 1kH z 10kH z f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (T ...
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V =20V GE 60A 15V 50A 13V 11V 40A 9V 30A 7V 20A 10A COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristic (T = 25° ...
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I , COLLECTOR CURRENT C Figure 9. Typical switching times as a function of collector current (inductive load, T =175° 400V 0/15V ...
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E and E include losses on ts 5.0mJ due to diode recovery 4.0mJ 3.0mJ 2.0mJ 1.0mJ 0.0mJ 0A 10A 20A 30A I , COLLECTOR CURRENT C Figure 13. Typical switching energy losses as a function of ...
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0nC 150 nC 1 80n GATE CHARGE GE Figure 17. Typical gate charge (I = 400A 300A 200A ...
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D=0.5 0.2 -1 0 0.29566 0.05 0.25779 0.19382 0.05279 R 1 0. single pulse 1µs 10µs 100µs 1ms t , PULSE WIDTH P Figure ...
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T =175°C J 20A 15A 10A 5A 0A 700A/µs 800A/µs 900A/µs di /dt, DIODE CURRENT SLOPE F Figure 25. Typical reverse recovery current as a function of diode current slope (V = 400V 30A Dynamic test ...
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TO-247AC Power Semiconductors IKW30N60T TrenchStop Series symbol [mm] min A 4.78 B 2.29 C 1.78 D 1.09 E 1.73 F 2.67 G 0.76 max H 20.80 K 15.65 L 5.21 M 19.81 N 3.560 3. 6. ...
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Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IKW30N60T TrenchStop Series i Figure C. Definition of diodes switching characteristics (t) j ...
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Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...