q67040s4717 Infineon Technologies Corporation, q67040s4717 Datasheet - Page 6

• Manufacturer Part Number: q67040s4717
• Description: Igbt In Trench And Fieldstop Technology With Soft, Fast Recovery Anti-parallel Emcon He Diode
• Manufacturer: Infineon Technologies Corporation

Power Semiconductors
100ns
100ns
Figure 9. Typical switching times as a
Figure 11. Typical switching times as a
10ns
10ns
1ns
25°C
0A
t
d(on)
t
t
d(on)
r
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
50°C
J
I
CE
GE
,
C
t
r
,
JUNCTION TEMPERATURE
= 400V, V
= 0/15V, I
10A
COLLECTOR CURRENT
75°C
C
GE
100°C 125°C 150°C
20A
= 30A, R
= 0/15V, R
J
CE
=175°C,
= 400V,
G
=10Ÿ,
30A
G
= 10Ÿ,
t
d(off)
t
t
d(off)
f
t
6
TrenchStop Series
f
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
100ns
10ns
7V
6V
5V
4V
3V
2V
1V
0V
-50°C
t
m in.
d(on)
t
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(I
d(off)
T
t
CE
C
t
r
J
f
,
0°C
= 0.43mA)
= 400V, V
JUNCTION TEMPERATURE
R
G
typ.
,
GATE RESISTOR
50°C
IKW30N60T
GE
m ax.
= 0/15V, I
J
= 175°C,
Rev. 2.1 Dev-04
100°C
C
= 30A,
150°C
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