q67040-a4420-a2 ETC-unknow, q67040-a4420-a2 Datasheet

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q67040-a4420-a2

Manufacturer Part Number
q67040-a4420-a2
Description
Igbt With Antiparallel Diode Forward Voltage Drop High Switching Speed Tail Current Latch-up Free
Manufacturer
ETC-unknow
Datasheet
IGBT With Antiparallel Diode
Preliminary data
Semiconductor Group
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Type
BUP 200 D
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Diode forward current
T
Pulsed diode current, t
T
Power dissipation
T
Chip or operating temperature
Storage temperature
C
C
C
C
C
C
C
GE
= 25 °C
= 90 °C
= 25 °C
= 90 °C
= 90 °C
= 25 °C
= 25 °C
= 20 k
p
= 1 ms
p
= 1 ms
V
1200V 3.6A
CE
I
C
1
Package
TO-220 AB
Symbol
V
V
V
I
I
I
I
P
T
T
C
Cpuls
F
Fpuls
j
stg
CE
CGR
GE
tot
Pin 1
G
-55 ... + 150
-55 ... + 150
Values
Ordering Code
Q67040-A4420-A2
± 20
1200
1200
3.6
2.4
7.2
4.8
48
50
8
Pin 2
C
BUP 200 D
Dec-06-1995
Pin 3
Unit
V
A
W
°C
E

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q67040-a4420-a2 Summary of contents

Page 1

... V I Package CE C 1200V 3.6A TO-220 AB Symbol CGR Cpuls Fpuls P tot stg 1 BUP 200 D Pin 1 Pin 2 Pin Ordering Code Q67040-A4420-A2 Values Unit 1200 V 1200 ± 3.6 2.4 7.2 4 -55 ... + 150 °C -55 ... + 150 Dec-06-1995 ...

Page 2

Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Diode thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage ...

Page 3

Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 100 Gon Rise time V = 600 ...

Page 4

Power dissipation tot C parameter: T 150 ° tot Safe operating area ...

Page 5

Typ. output characteristics ( ) parameter µ 125 ° Typ. saturation characteristics CE(sat) GE parameter °C j ...

Page 6

Typ. gate charge Gate parameter puls 400 Short circuit safe ...

Page 7

Forward characteristics of fast recovery reverse diode parameter 4 3.5 F 3.0 2.5 T =125°C j 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 Semiconductor Group Transient ...

Page 8

Package Outlines Dimensions in mm Weight: Semiconductor Group 8 BUP 200 D Dec-06-1995 ...

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