SI4500BDY-T1 Vishay Intertechnology, SI4500BDY-T1 Datasheet - Page 8

no-image

SI4500BDY-T1

Manufacturer Part Number
SI4500BDY-T1
Description
Complementary Mosfet Half-bridge (N- and P-channel)
Manufacturer
Vishay Intertechnology
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4500BDY-T1-E3
Manufacturer:
NXP
Quantity:
60 000
Part Number:
SI4500BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 810
Part Number:
SI4500BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4500BDY-T1-E3
Quantity:
70 000
Part Number:
SI4500BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4500BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72281.
www.vishay.com
8
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10 -
4
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10 -
Single Pulse
3
10 -
Normalized Thermal Transient Impedance, Junction-to-Ambient
3
Normalized Thermal Transient Impedance, Junction-to-Foot
10 -
2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10 -
2
10 -
1
10 -
1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
t
A
1
1
S-61005-Rev. C, 12-Jun-06
= P
t
Document Number: 72281
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 75 °C/W
600
10

Related parts for SI4500BDY-T1