SI4500BDY-T1 Vishay Intertechnology, SI4500BDY-T1 Datasheet - Page 5

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SI4500BDY-T1

Manufacturer Part Number
SI4500BDY-T1
Description
Complementary Mosfet Half-bridge (N- and P-channel)
Manufacturer
Vishay Intertechnology
Datasheet

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10
Single Pulse
-
4
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-
3
10 -
Normalized Thermal Transient Impedance, Junction-to-Ambient
3
Normalized Thermal Transient Impedance, Junction-to-Foot
10 -
2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10 -
2
10 -
1
10 -
1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
t
1
A
1
= P
Vishay Siliconix
t
2
DM
Si4500BDY
Z
thJA
100
thJA
t
t
1
2
(t)
= 75 °C/W
www.vishay.com
600
10
5

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