SI4500BDY-T1 Vishay Intertechnology, SI4500BDY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4500BDY-T1
• Description: Complementary Mosfet Half-bridge (N- and P-channel)
• Manufacturer: Vishay Intertechnology

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
25
20
15
10
5
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
V
5
= 9.1 A
2
GS
1
V
= 10 V
V
DS
GS
= 2.5 V
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
= 5 thru 3 V
I
10
D
- Total Gate Charge (nC)
4
- Drain Current (A)
Gate Charge
2
15
6
2.5 V
3
20
8
V
GS
4
= 4.5 V
25
10
1.5 V
2 V
30
12
5
1600
1400
1200
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
0
5
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
GS
0.5
= 9.1 A
V
V
4
= 4.5 V
DS
GS
T
Transfer Characteristics
J
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
C
25 °C
T
25
Capacitance
oss
C
8
= 125 °C
1.5
C
50
Vishay Siliconix
iss
Si4500BDY
12
75
2.0
- 55 °C
www.vishay.com
100
16
2.5
125
150
3.0
20
3