SI4500BDY-T1 Vishay Intertechnology, SI4500BDY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4500BDY-T1
• Description: Complementary Mosfet Half-bridge (N- and P-channel)
• Manufacturer: Vishay Intertechnology

Si4500BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
30
10
0.4
0.2
0.0
0
- 50
0
- 25
Source-Drain Diode Forward Voltage
V
0.3
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
I
D
J
- Temperature (°C)
= 250 µA
25
0.6
50
0.9
T
75
J
= 25 °C
0.01
100
0.1
10
100
1
0.1
1.2
r
Limited
DS(on)
125
I
D(on)
Single Pulse
T
A
Limited
V
1.5
= 25 °C
150
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
1
BV
DSS
Limited
10
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
80
70
60
50
40
30
20
10
0.001
0
I
DM
0
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
On-Resistance vs. Gate-to-Source Voltage
Limited
0.01
I
D
= 3.3 A
1
V
100
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
0.1
Time (sec)
2
I
D
S-61005-Rev. C, 12-Jun-06
= 9.1 A
1
Document Number: 72281
3
10
4
100
600
5