SI4500BDY-T1 Vishay Intertechnology, SI4500BDY-T1 Datasheet - Page 6

• Manufacturer Part Number: SI4500BDY-T1
• Description: Complementary Mosfet Half-bridge (N- and P-channel)
• Manufacturer: Vishay Intertechnology

Si4500BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
6
0.20
0.16
0.12
0.08
0.04
0.00
20
16
12
8
4
0
5
4
3
2
1
0
0
0
0
V
GS
V
I
D
DS
1
= 5.3 A
= 2.5 V
On-Resistance vs. Drain Current
= 10 V
1
V
4
DS
2
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
- Drain Current (A)
3
Gate Charge
V
2
8
GS
= 5 thru 3.5 V
4
12
3
5
V
GS
6
= 4.5 V
16
4
2.5 V
1.5 V
7
3 V
2 V
20
5
8
1.6
1.4
1.2
1.0
0.8
0.6
800
700
600
500
400
300
200
100
20
16
12
8
4
0
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
GS
rss
0.5
= 5.3 A
= 4.5 V
V
4
T
GS
Transfer Characteristics
0
V
J
DS
1.0
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
25
Capacitance
oss
8
1.5
50
S-61005-Rev. C, 12-Jun-06
Document Number: 72281
T
2.0
C
C
12
75
25 °C
= - 55 °C
iss
2.5
100
16
125 °C
3.0
125
150
3.5
20