SI4500BDY-T1 Vishay Intertechnology, SI4500BDY-T1 Datasheet - Page 7

• Manufacturer Part Number: SI4500BDY-T1
• Description: Complementary Mosfet Half-bridge (N- and P-channel)
• Manufacturer: Vishay Intertechnology

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
20
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.3
V
SD
T
0
J
Threshold Voltage
I
= 150 °C
T
- Source-to-Drain Voltage (V)
D
J
= 250 µA
- Temperature (°C)
25
0.6
50
0.9
75
T
J
0.01
= 25 °C
100
0.1
10
100
1
0.1
1.2
Limited
125
I
D(on)
Single Pulse
T
r
A
DS(on)
V
= 25 °C
150
1.5
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
Limited
1
BV
DSS
Limited
10
0.20
0.16
0.12
0.08
0.04
0.00
I
80
70
60
50
40
30
20
10
DM
0.001
0
Limited
0
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
On-Resistance vs. Gate-to-Source Voltage
0.01
I
D
= 1 A
1
100
V
GS
Single Pulse Power
0.1
- Gate-to-Source Voltage (V)
Time (sec)
2
Vishay Siliconix
1
Si4500BDY
I
D
3
= 5.3 A
10
www.vishay.com
4
100
600
5
7