hy5ps1g821m Hynix Semiconductor, hy5ps1g821m Datasheet - Page 74

• Manufacturer Part Number: hy5ps1g821m
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.2 / Oct. 2005
* : tRAS(min) , tRC(min) specification for DDR2-400 4-4-4 is 45ns, 60ns respectively.
Exit active power down to read
command
Exit active power down to read
command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
Average periodic Refresh
Interval
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-Down
mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down
mode)
ODT to power down entry
latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains
ON after CKE asynchronously
drops LOW
Parameter
tXARD
tXARDS
t
Symbol
t
AONPD
AOFPD
t
tANPD
t
tAXPD
tDelay
AOND
tREFI
AOFD
t
t
t
AON
tOIT
CKE
AOF
tIS+tCK+tIH
tAC(min)+2
tAC(min)+2
tAC(min)
tAC(min)
6 - AL
min
2.5
3
2
3
8
0
DDR2-400 3-3-3
2
tAC(max)+1
2.5tCK+tAC
tAC(max)+
2tCK+tAC
(max)+1
(max)+1
max
7.8
2.5
0.6
12
2
tAC(min)+2
tAC(min)+2
tIS+tCK+tI
tAC(min)
tAC(min)
6 - AL
min
2.5
H
DDR2-533 4-4-4
3
2
3
8
0
2
1HY5PS12421(L)M
tAC(max)+
tAC(max)+
2.5tCK+tA
2tCK+tAC
C(max)+1
(max)+1
HY5PS12821(L)M
max
7.8
2.5
0.6
12
2
1
tCK
us
Unit
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
Note
1, 2
16
17
15
1
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