hy5ps1g821m Hynix Semiconductor, hy5ps1g821m Datasheet - Page 41

• Manufacturer Part Number: hy5ps1g821m
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.2 / Oct. 2005
Example 5: Burst Read Operation Followed by Precharge:
RL = 4, AL = 0, CL = 4, BL = 8, t
CK/CK
CMD
DQS/DQS
DQ’s
* : rounded to next interger
AL = 0
Post CAS
READ A
T0
first 4-bit prefetch
T1
NOP
RL = 4
CL =4
AL + 2 Clks + max{tRTP;2 tCK}*
T2
NOP
second 4-bit prefetch
> = t
RAS
RTP
T3
NOP
> 2 clocks
> = t
RTP
T4
NOP
DOUT A
0
DOUT A
Precharge A
1
T5
DOUT A
2
DOUT A
3
T6
NOP
DOUT A
> = t
1HY5PS12421(L)M
4
HY5PS12821(L)M
RP
DOUT A
T7
5
NOP
DOUT A
6
DOUT A
Activate
Bank A
T 8
7
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