SI4618DY-T1-GE3 VISHAY [Vishay Siliconix], SI4618DY-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SI4618DY-T1-GE3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Si4618DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.012
0.011
0.010
0.009
0.008
0.007
10
50
40
30
20
10
8
6
4
2
0
0
0.0
0
0
I
D
= 8 A
On-Resistance vs. Drain Current
0.6
10
9
V
V
DS
Output Characteristics
GS
V
Q
DS
g
- Drain-to-Source Voltage (V)
V
= 10 V thru 5 V
- Total Gate Charge (nC)
I
GS
D
= 10 V
V
- Drain Current (A)
GS
Gate Charge
1.2
20
18
= 4.5 V
= 10 V
V
DS
1.8
27
30
= 20 V
V
DS
2.4
36
40
= 30 V
3 V
3.0
45
50
2800
2240
1680
1120
560
1.8
1.5
1.2
0.9
0.6
5
4
3
2
1
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
I
C
D
- 25
rss
= 8 A
1
T
6
T
V
V
C
C
GS
DS
Transfer Characteristics
0
T
= 25 °C
= 125 °C
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
Capacitance
12
2
C
C
50
S09-2109-Rev. B, 12-Oct-09
oss
iss
Document Number: 74450
T
18
3
C
75
= - 55 °C
100
V
GS
24
V
4
GS
= 10 V
125
= 4.5 V
150
30
5