SI4618DY-T1-GE3 VISHAY [Vishay Siliconix], SI4618DY-T1-GE3 Datasheet - Page 11

• Manufacturer Part Number: SI4618DY-T1-GE3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74450.
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.2
0.05
0.1
0.05
0.2
0.1
Duty Cycle = 0.5
0.02
Duty Cycle = 0.5
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
Vishay Siliconix
t
2
DM
100
Z
thJA
thJA
Si4618DY
t
t
1
2
(t)
= 125 °C/W
www.vishay.com
1000
1
0
11