SI4618DY Vishay Siliconix, SI4618DY Datasheet

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SI4618DY

Manufacturer Part Number
SI4618DY
Description
Dual N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4618DY
Manufacturer:
VISHAY
Quantity:
10
Part Number:
SI4618DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4618DY-T1-E3
Manufacturer:
VISHAY/PBF
Quantity:
112 200
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 125 °C/W (Channel-1) and 100 °C/W (Channel-2).
Document Number: 74450
S-70193-Rev. A, 29-Jan-07
Channel-1
Channel-2
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free)
DS
30
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
G
G
S
S
1
2
2
2
C
V
= 25 °C.
DS
30
30
1
2
3
4
(V)
Diode Forward Voltage
0.0195 at V
0.0115 at V
T op V i e w
0.017 at V
0.010 at V
0.43 V at 1.0 A
SO-8
r
V
J
DS(on)
SD
= 150 °C)
b, d
(V)
GS
GS
GS
GS
(Ω)
8
7
6
5
= 10 V
= 10 V
= 4.5 V
= 4.5 V
D
S
S
S
1
1
1
1
/D
/D
/D
2
2
2
I
D
15.2
14.1
8.0
7.5
(A)
a
A
I
New Product
F
= 25 °C, unless otherwise noted
Q
Steady State
3.8
(A)
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
t ≤ 10 sec
g
12.5
C
C
C
C
C
A
A
A
A
A
17
(Typ)
a
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Notebook Logic DC-DC
• Low Current DC-DC
Symbol
Symbol
T
R
R
J
V
V
E
I
I
I
P
, T
I
DM
SM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
g
N-Channel 1
N-Channel 2
and UIS Tested
MOSFET
MOSFET
Typ
G
G
®
72
51
Channel-1
Channel-1
1
2
Power MOSFET
1.25
1.38
0.88
6.7
5.4
± 16
11.2
1.98
1.26
8.0
6.4
1.8
30
35
35
15
b, c
b, c
b, c
b, c
b, c
Max
90
63
- 55 to 150
D
S
1
2
Typ
43
25
Channel-2
Channel-2
11.4
2.35
www.DataSheet4U.com
9.1
2.4
1.5
± 16
15.2
12.1
11.2
4.16
2.66
Vishay Siliconix
3.8
Schottky Diode
30
60
35
15
b, c
b, c
b, c
b, c
b, c
S
Max
53
30
1
/D
Si4618DY
2
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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SI4618DY Summary of contents

Page 1

... Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...

Page 2

... Si4618DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... ° Channel di/dt = 100 A/µ Channel di/dt = 100 A/µ Si4618DY www.DataSheet4U.com Vishay Siliconix a Min Max Typ ...

Page 4

... Si4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.025 0.022 0.019 0.016 0.013 0.010 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 5

... A Single Pulse 0. Drain-to-Source Voltage ( minimum V at which r is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient Si4618DY www.DataSheet4U.com Vishay Siliconix 125 °C 25 ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 6

... Si4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 2.0 1.5 1.0 0.5 0 Case Temperature (°C) C Power Derating, Junction-to-Foot *The power dissipation P is based J(max) pation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...

Page 7

... Document Number: 74450 S-70193-Rev. A, 29-Jan- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4618DY www.DataSheet4U.com Vishay Siliconix Notes Duty Cycle ...

Page 8

... Si4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.012 0.011 0.010 0.009 0.008 0.007 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 9

... DS(on 0 °C A Single Pulse 0. Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4618DY www.DataSheet4U.com Vishay Siliconix 0. 0.04 0.03 0.02 125 °C 0.01 25 °C 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 10

... Si4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Power Derating, Junction-to-Foot *The power dissipation P is based J(max) pation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...

Page 11

... Document Number: 74450 S-70193-Rev. A, 29-Jan- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si4618DY www.DataSheet4U.com Vishay Siliconix Notes Duty Cycle ...

Page 12

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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