SI4618DY-T1-GE3 VISHAY [Vishay Siliconix], SI4618DY-T1-GE3 Datasheet

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SI4618DY-T1-GE3

Manufacturer Part Number
SI4618DY-T1-GE3
Description
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free)
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 125 °C/W (Channel-1) and 100 °C/W (Channel-2).
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
G
S
G
S
30
1
2
2
2
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
1
2
3
4
C
V
= 25 °C.
DS
30
30
(V)
T op V i e w
Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Diode Forward Voltage
SO-8
0.0195 at V
0.0115 at V
0.017 at V
0.010 at V
0.43 V at 1.0 A
R
V
J
DS(on)
SD
= 150 °C)
b, d
8
7
6
5
(V)
GS
GS
GS
GS
D
S
S
S
(Ω)
= 10 V
= 10 V
= 4.5 V
= 4.5 V
1
1
1
1
/D
/D
/D
2
2
2
I
D
15.2
14.1
8.0
7.5
(A)
A
a
I
= 25 °C, unless otherwise noted
F
Q
Steady State
3.8
(A)
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
g
12.5
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
(Typ.)
17
a
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Notebook Logic dc-to-dc
• Low Current dc-to-dc
Symbol
Symbol
T
R
R
J
V
V
E
I
I
Definition
I
P
, T
I
DM
SM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
g
and UIS Tested
Typ.
®
72
51
Channel-1
Channel-1
Power MOSFET
1.25
1.38
0.88
N-Channel 1
N-Channel 2
6.7
5.4
± 16
11.2
1.98
1.26
MOSFET
MOSFET
8.0
6.4
1.8
G
G
30
35
35
15
b, c
b, c
1
2
b, c
b, c
b, c
Max.
90
63
- 55 to 150
D
S
Typ.
1
2
43
25
Channel-2
Channel-2
11.4
2.35
9.1
2.4
1.5
± 16
15.2
12.1
11.2
4.16
2.66
Vishay Siliconix
3.8
30
60
35
15
b, c
b, c
b, c
b, c
b, c
Max.
53
30
Schottky Diode
Si4618DY
S
www.vishay.com
1
/D
2
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4618DY-T1-GE3 Summary of contents

Page 1

... Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free) Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current ...

Page 2

... Si4618DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... ° Channel dI/dt = 100 A/µ Channel dI/dt = 100 A/µ Si4618DY Vishay Siliconix a Typ. Min. Max ...

Page 4

... Si4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.025 0.022 0.019 0.016 0.013 0.010 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 5

... °C A Single Pulse 0. Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4618DY Vishay Siliconix 125 °C 25 ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 6

... Si4618DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 2.0 1.5 1.0 0.5 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Document Number: 74450 S09-2109-Rev. B, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4618DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 ° ...

Page 8

... Si4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.012 0.011 0.010 0.009 0.008 0.007 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 9

... Limited DS(on 0 °C A Single Pulse 0. Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4618DY Vishay Siliconix 0. 0.04 0.03 0.02 125 °C 0.01 25 °C 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 10

... Si4618DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Document Number: 74450 S09-2109-Rev. B, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4618DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 125 ° ...

Page 12

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 13

® TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified ...

Page 14

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 15

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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