SI4618DY-T1-GE3 VISHAY [Vishay Siliconix], SI4618DY-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI4618DY-T1-GE3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Si4618DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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6
2.5
2.0
1.5
1.0
0.5
0.0
0
Power Derating, Junction-to-Foot
25
D
T
is based on T
C
- Case Temperature (°C)
50
75
J(max)
10
8
6
4
2
0
0
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
25
125
T
C
50
Current Derating*
- Case Temperature (°C)
150
75
100
1.20
0.96
0.72
0.48
0.24
0.00
125
0
150
Power Derating, Junction-to-Ambient
25
T
A
- Ambient Temperature (°C)
50
S09-2109-Rev. B, 12-Oct-09
75
Document Number: 74450
100
125
150