SI4618DY-T1-GE3 VISHAY [Vishay Siliconix], SI4618DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4618DY-T1-GE3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
150 °C
0.6
50
I
75
0.01
D
100
0.1
25 °C
10
0.8
= 250 µA
1
0
1 .
100
I
* V
D
Safe Operating Area, Junction-to-Ambient
Limited by R
= 5 mA
GS
1.0
125
V
minimum V
DS
1.2
DS(on)
- Drain-to-Source Voltage (V)
150
Single Pulse
1
T
A
*
GS
= 25 °C
at which R
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
100
is specified
80
60
40
20
0
0
0 .
0
1 ms
10 ms
1 s
10 s
100 ms
DC
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power, Junction-to-Ambient
I
D
1
= 8 A
1
0
0
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
125 °C
0.1
25 °C
Vishay Siliconix
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6
Si4618DY
7
www.vishay.com
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