SST25VF040B-50-4I-SAE SST [Silicon Storage Technology, Inc], SST25VF040B-50-4I-SAE Datasheet - Page 27

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SST25VF040B-50-4I-SAE

Manufacturer Part Number
SST25VF040B-50-4I-SAE
Description
4 Mbit SPI Serial Flash
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet

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4 Mbit SPI Serial Flash
SST25VF040B
Power-Up Specifications
All functionalities and DC specifications are specified for a V
in less than 300 ms). See Table 15 and Figure 25 for more information.
TABLE 15: Recommended System Power-up Timings
©2009 Silicon Storage Technology, Inc.
Symbol
T
T
PU-READ
PU-WRITE
FIGURE 25: Power-up Timing Diagram
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
V
V
DD
DD
Parameter
V
V
V
Max
Min
DD
DD
DD
Min to Read Operation
Min to Write Operation
Commands may not be accepted or properly
Chip selection is not allowed.
interpreted by the device.
T
T
27
PU-READ
PU-WRITE
DD
ramp rate of greater than 1V per 100 ms (0v - 3.0V
Device fully accessible
Minimum
100
100
1295 PwrUp.0
Time
S71295-05-000
Units
Data Sheet
µs
µs
T15.0 1295
10/09

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