SST25VF040B-50-4I-SAE SST [Silicon Storage Technology, Inc], SST25VF040B-50-4I-SAE Datasheet

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SST25VF040B-50-4I-SAE

Manufacturer Part Number
SST25VF040B-50-4I-SAE
Description
4 Mbit SPI Serial Flash
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet

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FEATURES:
• Single Voltage Read and Write Operations
• Serial Interface Architecture
• High Speed Clock Frequency
• Superior Reliability
• Low Power Consumption:
• Flexible Erase Capability
• Fast Erase and Byte-Program:
PRODUCT DESCRIPTION
The 25 series Serial Flash family features a four-wire, SPI-
compatible interface that allows for a low pin-count pack-
age which occupies less board space and ultimately lowers
total system costs. The SST25VF040B devices are
enhanced with improved operating frequency and even
lower power consumption. SST25VF040B SPI serial flash
memories are manufactured with SST proprietary, high-
performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches.
©2009 Silicon Storage Technology, Inc.
S71295-05-000
1
– 2.7-3.6V
– SPI Compatible: Mode 0 and Mode 3
– Up to 50/80 MHz
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Read Current: 10 mA (typical)
– Standby Current: 5 µA (typical)
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 7 µs (typical)
10/09
SST25VF040B4Mb Serial Peripheral Interface (SPI) flash memory
4 Mbit SPI Serial Flash
SST25VF040B
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
• Auto Address Increment (AAI) Programming
• End-of-Write Detection
• Hold Pin (HOLD#)
• Write Protection (WP#)
• Software Write Protection
• Temperature Range
• Packages Available
• All devices are RoHS compliant
The SST25VF040B devices significantly improve perfor-
mance and reliability, while lowering power consumption.
The devices write (Program or Erase) with a single power
supply of 2.7-3.6V for SST25VF040B. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies.
The SST25VF040B device is offered in an 8-lead SOIC
(200 mils), 8-lead SOIC (150 mils), and 8-contact WSON
(6mm x 5mm) packages. See Figure 2 for pin assignments.
– Decrease total chip programming time over
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin in AAI Mode
– Suspends a serial sequence to the memory
– Enables/Disables the Lock-Down function of the
– Write protection through Block-Protection bits in
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
– 8-lead SOIC (200 mils)
– 8-lead SOIC (150 mils)
– 8-contact WSON (6mm x 5mm)
Byte-Program operations
without deselecting the device
status register
status register
These specifications are subject to change without notice.
Data Sheet

Related parts for SST25VF040B-50-4I-SAE

SST25VF040B-50-4I-SAE Summary of contents

Page 1

... Erase or Program operation is less than alternative flash memory technologies. The SST25VF040B device is offered in an 8-lead SOIC (200 mils), 8-lead SOIC (150 mils), and 8-contact WSON (6mm x 5mm) packages. See Figure 2 for pin assignments. ...

Page 2

... Data Sheet Address Buffers and Latches CE# FIGURE 1: Functional Block Diagram ©2009 Silicon Storage Technology, Inc Decoder Control Logic Serial Interface SCK SI SO WP# HOLD Mbit SPI Serial Flash SST25VF040B SuperFlash Memory Y - Decoder I/O Buffers and Data Latches 1295 B1.0 S71295-05-000 10/09 ...

Page 3

... The Write Protect (WP#) pin is used to enable/disable BPL bit in the status register. HOLD# Hold To temporarily stop serial communication with SPI flash memory without resetting the device. V Power Supply To provide power supply voltage: 2.7-3.6V for SST25VF040B DD V Ground SS ©2009 Silicon Storage Technology, Inc ...

Page 4

... FIGURE 3: SPI Protocol ©2009 Silicon Storage Technology, Inc. 4 Mbit SPI Serial Flash The SST25VF040B supports both Mode 0 (0,0) and Mode 3 (1,1) of SPI bus operations. The difference between the two modes, as shown in Figure 3, is the state of the SCK signal when the bus master is in Stand-by mode and no data is being transferred ...

Page 5

... HOLD# Active FIGURE 4: Hold Condition Waveform Write Protection SST25VF040B provides software Write protection. The Write Protect pin (WP#) enables or disables the lock-down function of the status register. The Block-Protection bits (BP3, BP2, BP1, BP0, and BPL) in the status register pro- vide Write protection to the memory array and the status register ...

Page 6

... Default at Power- Auto Address Increment (AAI) The Auto Address Increment Programming-Status bit pro- vides status on whether the device is in AAI programming mode or Byte-Program mode. The default at power up is Byte-Program mode. 6 SST25VF040B Read/Write R R R/W R/W R/W R/W R R/W T3.0 1295 S71295-05-000 10/09 ...

Page 7

... Lock-Down (BPL) bit. When BPL is set prevents any further alteration of the BPL, BP3, BP2, BP1, and BP0 bits. When the WP# pin is driven high (V effect and its value is “Don’t Care”. After power-up, the BPL bit is reset to 0. SST25VF040B FOR 2 Status Register Bit BP3 ...

Page 8

... Data Sheet Instructions Instructions are used to read, write (Erase and Program), and configure the SST25VF040B. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to executing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, Write-Status-Register, or Chip-Erase instruc- tions, the Write-Enable (WREN) instruction must be exe- cuted first ...

Page 9

... SST25VF040B Read (25/33 MHz) The Read instruction, 03H, supports MHz (for SST25VF040B-50-xx-xxF MHz (for SST25VF040B- 80-xx-xxE) Read. The device outputs the data starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low to high transition on CE# ...

Page 10

... High-Speed-Read (50/80 MHz) The High-Speed-Read instruction supporting MHz (for SST25VF040B-50-xx-xxF) or SST25VF040B-80-xx-xxE) Read is initiated by executing an 8-bit command, 0BH, followed by address bits [A and a dummy byte. CE# must remain active low for the duration of the High-Speed-Read cycle. See Figure 6 for the High-Speed-Read sequence. ...

Page 11

... Mbit SPI Serial Flash SST25VF040B Byte-Program The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction applied to a pro- tected memory area will be ignored. ...

Page 12

... AAI-Word-program opera- tion and return SO pin to output Software Status Register =1. CE# must be 0 data during AAI Word programming. (see Figure 9) CE# SCK 12 4 Mbit SPI Serial Flash SST25VF040B MODE MODE MSB HIGH IMPEDANCE SO 1295 EnableSO ...

Page 13

... Mbit SPI Serial Flash SST25VF040B CE# MODE SCK MODE MSB HIGH IMPEDANCE SO 1295 DisableSO.0 FIGURE 9: Disable SO as Hardware RY/BY# during AAI Programming CE MODE 3 SCK MODE Load AAI command, Address, 2 bytes data ...

Page 14

... Software End-of-Write Detection ©2009 Silicon Storage Technology, Inc. Wait T or poll Software Status BP register to load next valid Mbit SPI Serial Flash SST25VF040B 1 command WRDI RDSR n-1 n Last 2 WDRI to exit ...

Page 15

... Mbit SPI Serial Flash SST25VF040B 4-KByte Sector-Erase The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any command sequence ...

Page 16

... MSB HIGH IMPEDANCE ADDR ADDR MSB MSB HIGH IMPEDANCE 16 4 Mbit SPI Serial Flash SST25VF040B ), remaining address bits can X CE# must be driven high before the instruction -A ]. Address bits [ are used remaining address bits can ...

Page 17

... Mbit SPI Serial Flash SST25VF040B Chip-Erase The Chip-Erase instruction clears all bits in the device to FFH. A Chip-Erase instruction will be ignored if any of the memory area is protected. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Chip-Erase instruction sequence ...

Page 18

... Any pro- gram operation in progress may continue executing the WRDI instruction. CE# must be driven high before the WRDI instruction is executed. CE# MODE MODE 0 SCK 04 SI MSB HIGH IMPEDANCE SO 1295 WRDI Mbit SPI Serial Flash SST25VF040B after BP S71295-05-000 10/09 ...

Page 19

... Mbit SPI Serial Flash SST25VF040B Write-Status-Register (WRSR) The Write-Status-Register instruction writes new values to the BP3, BP2, BP1, BP0, and BPL bits of the status regis- ter. CE# must be driven low before the command sequence of the WRSR instruction is entered and driven high before the WRSR instruction is executed. See Figure 19 for EWSR or WREN and WRSR instruction sequences ...

Page 20

... Data Sheet JEDEC Read-ID The JEDEC Read-ID instruction identifies the device as SST25VF040B and the manufacturer as SST. The device information can be read from executing the 8-bit command, 9FH. Following the JEDEC Read-ID instruction, the 8-bit manufacturer’s ID, BFH, is output from the device. After that, a 16-bit device ID is shifted out on the SO pin ...

Page 21

... Mbit SPI Serial Flash SST25VF040B Read-ID (RDID) The Read-ID instruction (RDID) identifies the devices as SST25VF040B and manufacturer as SST. This command is backward compatible to all SST25xFxxxA devices and should be used as default device identification when multi- ple versions of SPI Serial Flash devices are used in a design ...

Page 22

... OUT =100 µ 0 =1 =-100 µ Mbit SPI Serial Flash SST25VF040B +0.5V DD +2. EST = /0.9 V @25 MHz, SO=open DD DD /0.9 V @50 MHz, SO=open Max ...

Page 23

... Mbit SPI Serial Flash SST25VF040B TABLE 9: DC Operating Characteristics (25VF040B-80-xx-xxxE) Symbol Parameter I Read Current DDR I Read Current DDR3 I Program and Erase Current DDW I Standby Current SB I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL V Input High Voltage ...

Page 24

... Maximum Rise and Fall time may be limited Relative to SCK. ©2009 Silicon Storage Technology, Inc. 25 MHz Min 18 18 0.1 0 and T requirements SCKH SCKL 24 4 Mbit SPI Serial Flash SST25VF040B 50 MHz Max Min Max 0.1 0 ...

Page 25

... Mbit SPI Serial Flash SST25VF040B TABLE 14: AC Operating Characteristics (25VF040B-80-xx-xxxE) Symbol Parameter 1 F Serial Clock Frequency CLK T Serial Clock High Time SCKH T Serial Clock Low Time SCKL 2 T Serial Clock Rise Time (Slew Rate) SCKR T Serial Clock Fall Time (Slew Rate) ...

Page 26

... FIGURE 24: Hold Timing Diagram ©2009 Silicon Storage Technology, Inc. T SCKF T SCKR T SCKL T OH MSB HHH HLS T HLH Mbit SPI Serial Flash SST25VF040B T CPH T T CEH CHS LSB HIGH-Z 1295 SerIn.0 T CHZ LSB 1295 SerOut.0 T HHS T LZ 1295 Hold.0 S71295-05-000 10/09 ...

Page 27

... Mbit SPI Serial Flash SST25VF040B Power-Up Specifications All functionalities and DC specifications are specified for less than 300 ms). See Table 15 and Figure 25 for more information. TABLE 15: Recommended System Power-up Timings Symbol Parameter Min to Read Operation PU-READ Min to Write Operation ...

Page 28

... V (0.1V DD ILT DD ) and V (0.4V ). Input rise and fall times (10 TESTER TO DUT 28 4 Mbit SPI Serial Flash SST25VF040B V HT OUTPUT V LT 1295 IORef.0 ) for a logic “0”. Measurement reference points ↔ 90%) are <5 ns. Note Test HT HIGH ...

Page 29

... XXX X - Valid combinations for SST25VF040B SST25VF040B-50-4C-S2AF SST25VF040B-50-4I-S2AF SST25VF040B-80-4I-S2AE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2009 Silicon Storage Technology, Inc. ...

Page 30

... Maximum allowable mold flash is 0. the package ends and 0.25 mm between leads. FIGURE 28: 8-Lead Small Outline Integrated Circuit (SOIC) 200 mil Body Width (5.2mm x 8mm) SST Package Code: S2A ©2009 Silicon Storage Technology, Inc. 4 Mbit SPI Serial Flash SIDE VIEW 0.50 0.35 1.27 BSC 0.25 END VIEW 0.05 2.16 1.75 0.25 0.19 08-soic-EIAJ-S2A-3 30 SST25VF040B 0˚ 8˚ 0.80 0.50 1mm S71295-05-000 10/09 ...

Page 31

... Mbit SPI Serial Flash SST25VF040B Pin #1 Identifier TOP VIEW 5.0 4.8 4.00 3.80 6.20 5.80 Note: 1. Complies with JEDEC publication 95 MS-012 AA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0 Maximum allowable mold flash is 0. the package ends and 0.25 mm between leads. ...

Page 32

... FIGURE 30: 8-Contact Very-very-thin Small Outline No-lead (WSON) SST Package Code: QA ©2009 Silicon Storage Technology, Inc. SIDE VIEW 0.2 5.00 ± 0.10 0.076 0.05 Max 0.80 0.70 leads. 1mm SS of the unit Mbit SPI Serial Flash SST25VF040B BOTTOM VIEW Pin #1 1.27 BSC 4.0 0.48 0.35 3.4 0.70 0.50 CROSS SECTION 0.80 0.70 8-wson-5x6-QA-9.0 S71295-05-000 10/09 ...

Page 33

... MHz)” on page 10 05 • Added 50/33 MHz information throughout. • Separated AC and DC Characteristics for SST25VF040B-50-4C-xxxF & SST25VF040B-80-4I-xxxE Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2009 Silicon Storage Technology, Inc. Description www ...

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