IDT7187L25DB IDT [Integrated Device Technology], IDT7187L25DB Datasheet - Page 4

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IDT7187L25DB

Manufacturer Part Number
IDT7187L25DB
Description
CMOS STATIC RAM 64K (64K x 1-BIT)
Manufacturer
IDT [Integrated Device Technology]
Datasheet

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IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
DC ELECTRICAL CHARACTERISTICS
(V
NOTES:
1. All values are maximum guaranteed values.
2. At f = f
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(L Version Only) V
NOTES:
1. T
2. t
3. This parameter is guaranteed, but not tested.
LOW V
Symbol
I
I
I
I
V
CC1
CC2
SB
SB1
Symbol
V
I
t
t
|I
CS
CC
CC
CCDR
CDR
R
LI
RC
DR
(3)
A
|
(3)
= +25 C.
= 5V
= Read Cycle Time.
(3)
MAX
CC
Operating Power
Supply Current
CS
V
Dynamic Operating
Current
CS
V
Standby Power Supply
Current (TTL Level)
CS
Outputs Open, f = f
Full Standby Power
Supply Current (CMOS
V
V
Level)
CC
CC
CC
IN
address and data inputs are cycling at the maximum frequency of read cycles of 1/t
10%, V
= V
= V
DATA RETENTION WAVEFORM
=Max., V
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
= Max., f = 0
= Max., f = f
V
Parameter
V
CC
IH
IL
IL
LC
CS
, Outputs Open
, Outputs Open
, V
for Data Retention
, f = 0
HC
CC
LC
Parameter
V
IN
= V
HC
= Max.,
= 0.2V, V
(2)
MAX
,
(2)
CC
V
MAX
HC
(2)
- 0.2V, V
t
CDR
or
(2)
HC
= V
Power
V
LC
4.5V
S
S
S
S
L
L
L
L
IH
CC
= 0.2V
CS
V
- 0.2V)
Test Condition
IN
V
Com’l.
V
HC
HC
7187S25
7187L25
(1)
or
105
130
110
Mil.
1.5
MIL.
COM’L.
85
55
50
20
V
LC
RETENTION
Com’l.
6.2
V
MODE
DATA
7187S35
7187L35
DR
V
t
DR
Min.
RC
2.0
0
2V
(2)
105
120
100
1.5
Mil.
85
50
40
20
Com’l.
7187S45
7187L45
2.0v
10
10
RC
. f = 0 means no input lines change.
Typ.
V
105
120
CC
1.5
85
95
50
35
20
Mil.
@
(1)
3.0V
15
15
7187S55/70
7187L55/70
V
Com’l.
4.5V
IH
MILITARY TEMPERATURE RANGE
30/28
105
120
1.5
Mil.
85
90
50
20
t
R
2.0V
600
150
2
Com’l.
7187S85
7187L85
V
Max.
CC
@
3.0V
Mil.
105
120
900
225
1.5
85
90
50
28
20
2
Unit
2986 drw 04
mA
mA
mA
mA
2986 tbl 08
2986 tbl 09
Unit
ns
ns
V
4
A
A

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