m28f008 Intel Corporation, m28f008 Datasheet - Page 2

• Manufacturer Part Number: m28f008
• Description: 8 Mbit 1 Mbit X 8 Flash Memory
• Manufacturer: Intel Corporation

M28F008
PRODUCT OVERVIEW
The M28F008 is a high-performance 8 Mbit
(8 388 608 bit) memory organized as 1 Mbyte
(1 048 576 bytes) of 8 bits each Sixteen 64 Kbyte
(65 536 byte) blocks are included on the M28F008
A memory map is shown in Figure 4 of this specifica-
tion A block erase operation erases one of the six-
teen blocks of memory in typically 1 6 seconds in-
dependent of the remaining blocks Each block can
be independently erased and written 10 000 cycles
Erase Suspend mode allows system software to
suspend block erase to read data or execute code
from any other block of the M28F008
The M28F008 is available in 40-lead sidebrazed
DIP and 42-lead Flatpack packages Pinouts are
shown in Figures 2a and 2b of this specification
The Command User Interface serves as the inter-
face between the microprocessor or microcontroller
and the internal operation of the M28F008
Byte Write and Block Erase Automation allow
byte write and block erase operations to be execut-
ed using a two-write command sequence to the
Command User Interface The internal Write State
Machine (WSM) automatically executes the algo-
rithms and timings necessary for byte write and
block erase operations
thereby unburdening the microprocessor or micro-
controller Writing of memory data is performed in
byte increments typically within 9 ms an 80% im-
provement over current flash memory products I
byte write and block erase currents are 30 mA
maximum V
age is 11 4V to 12 6V
2
PP
byte write and block erase volt-
including verifications
PP
The Status Register indicates the status of the
WSM and when the WSM successfully completes
the desired byte write or block erase operation
The RY BY output gives an additional indicator of
WSM activity providing capability for both hardware
signal of status (versus software polling) and status
masking (interrupt masking for background erase
for example) Status polling using RY BY minimizes
both CPU overhead and system power consump-
tion When low RY BY indicates that the WSM is
performing a block erase or byte write operation
RY BY high indicates that the WSM is ready for new
commands block erase is suspended or the device
is in deep powerdown mode
Maximum access time is 100 ns (t
tary temperature range (
over V
tive current (CMOS Read) is 35 mA maximum at
8 MHz
When the CE and RP pins are at V
Standby mode is enabled
A Deep Powerdown mode is enabled when the RP
pin is at GND minimizing power consumption and
providing write protection I
erdown is 100 mA maximum Reset time of 400 ns
is required from RP switching high until outputs are
valid to read attempts Equivalently the device has a
wake time of 1 ms from RP high until writes to the
Command User Interface are recognized by the
M28F008 With RP at GND the WSM is reset and
the Status Register is cleared
CC
supply voltage range 4 5V to 5 5V I
b
CC
55 C to
current in deep pow-
ACC
CC
the I
) over the mili-
a
125 C) and
CC
CC
CMOS
ac-