m28f008 Intel Corporation, m28f008 Datasheet
m28f008
Related parts for m28f008
m28f008 Summary of contents
Page 1
... SRAM-Compatible Write Interface Y Intel’s M28F008 8-Mbit FlashFile Memory is the highest density nonvolatile read write solution for solid state storage The M28F008’s extended cycling symmetrically blocked architecture fast access time write automa- tion and low power consumption provide a more reliable lower power lighter weight and higher performance ...
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... RP switching high until outputs are valid to read attempts Equivalently the device has a wake time from RP high until writes to the Command User Interface are recognized by the M28F008 With RP at GND the WSM is reset and PP the Status Register is cleared ) over the mili- ...
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... OE is active low WE INPUT WRITE ENABLE Controls writes to the Command User Interface and array blocks WE is active low Addresses and data are latched on the rising edge of the WE pulse Figure 1 Block Diagram Table 1 Pin Description Name and Function M28F008 271232 – ...
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... M28F008 Table 1 Pin Description (Continued) Symbol Type RY BY OUTPUT READY BUSY Indicates the status of the internal Write State Machine When low it indicates that the WSM is performing a block erase or byte write operation RY BY high indicates that the WSM is ready for new commands block erase is ...
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... RAM- like interface timings After initial device powerup or after return from deep powerdown mode (see Bus Operations) the M28F008 functions as a read-only memory Manipu- lation of external memory-control pins allow array read standby and output disable operations Both Status ...
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... Interface software to initiate and poll progress of in- ternal byte write and block erase can be stored in any of the M28F008 blocks This code is copied to and executed from system RAM during actual flash memory update After successful completion of byte write and or block erase code data reads from the ...
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... M28F008’s circuitry and substantially reduces device power consumption The outputs (DQ are placed in a high-impedence state independent of the status the M28F008 is deselected dur- ing block erase or byte write the device will continue functioning and consuming normal active power until ...
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... M28F008 commands Read Array Command Upon initial device powerup and after exit from deep powerdown mode the M28F008 defaults to Read Array mode This operation is also initiated by writing FFH into the Command User Interface Microproces- sor read cycles retrieve array data The device re- ...
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... V PP PPL PPH Read Status Register Command The M28F008 contains a Status Register which may be read to determine when a byte write or block erase operation is complete and whether that oper- ation completed successfully The Status Register may be read at any time by writing the Read Status ...
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... WE written The WSM then takes over controlling the byte write and write verify algorithms internally After the two-command byte write sequence is written to it the M28F008 auto- matically outputs Status Register data when read (see Figure 5 Byte Write Flowchart) The CPU can ...
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... M28F008 and returns to V finished executing the internal algorithm RY BY can be connected to the interrupt input of the system CPU or controller It is active at all times not tri-stated if the M28F008 inputs are brought also Erase Suspend or deep powerdown modes ...
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... M28F008 271232 – 4 FULL STATUS CHECK PROCEDURE 271232 – 5 Figure 5 Automated Byte Write Flowchart 12 Bus Command Comments Operation e Write Byte Write Data 40H (10H) e Setup Address Byte to be written Write Byte Write Data to be written e Address Byte to be written Standby Read ...
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... Write State Machine only cleared by the Clear Status Register Command in cases where multiple blocks are erased before full status is checked If error is detected clear the Status Register before attempting retry or other error recovery M28F008 e Busy Busy ...
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... M28F008 271232 – 8 Figure 7 Erase Suspend Resume Flowchart 14 Bus Command Comments Operation e Write Erase Data B0H Suspend e Write Read Data 70H Status Register Standby Check Read V Ready V OH Busy or Read Status Register Check Ready 0 Toggle Update ...
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... M28F008s for solid-state storage can lower standby or sleep modes reducing power con- IL sumption If access to the M28F008 is again need- ed the part can again be read following the t and t wakeup cycles required after RP is first PHWL ...
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... M28F008 ABSOLUTE MAXIMUM RATINGS b Operating Temperature Temperature Under Bias Storage Temperature Voltage on Any Pin (except V and with Respect to GND Program Voltage with PP Respect to GND during b Block Erase Byte Write Supply Voltage ...
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... IN C Output Capacitance OUT NOTES 1 All currents are in RMS unless otherwise noted specified with the device deselected If the M28F008 is read while in Erase Suspend Mode current draw is the CCES sum of I and I CCES CCR 3 Includes Block Erases Byte Writes are inhibited when V ...
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... M28F008-10 Notes Min Max 100 100 2 100 400 100 Includes Jig 271232 – Capacitance (4) M28F008-12 Unit Min Max 120 ns 120 ns 120 ns 400 ...
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... Figure 8 AC Waveform for Read Operations M28F008 19 ...
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... Byte write and block erase durations are measured to completion ( until determination of byte write block erase success ( PPH 7 See AC Input Output Reference Waveforms and AC Testing Load Circuits for testing characteristics (7) M28F008-10 M28F008-12 Notes Min Max Min 100 120 2 1 ...
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... BLOCK ERASE AND BYTE WRITE PERFORMANCE Parameter Notes Block Erase Time 1 2 Block Write Time 1 2 NOTES Excludes System-Level Overhead M28F008-10 M28F008-12 Min Typ Max Min M28F008 Unit Typ Max sec sec 21 ...
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... M28F008 Figure 9 AC Waveform for Write Operations 22 ...
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... M28F008 (6) Unit Max 100 ns ms sec ms ns should be held at 23 ...
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... M28F008 Figure 10 Alternate AC Waveform for Write Operations 24 ...
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... Software Drivers’’ AP-364 ‘‘28F008SA Automation and Algorithms’’ ER-27 ‘‘The Intel 28F008SA Flash Memory’’ ER-28 ‘‘ETOX III Flash Memory Technology’’ 100 ns e 120 ns Order Number 290435 292094 292095 292099 294011 290412 M28F008 25 ...
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... M28F008 MC28F008 PACKAGE DIMENSIONS Millimeters Symbol Min Max ...
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... Typical 0 017 0 023 Typical 0 005 0 010 1 050 1 070 Reference 1 000 0 630 0 650 0 530 0 550 0 035 0 065 Typical 0 045 0 055 Reference 310 0 340 42 0 050 0 061 0 009 0 040 0 000 0 050 M28F008 271232 – 16 Notes Solid Lid Typical Typical Reference Typical Reference 27 ...
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... M28F008 REVISION HISTORY Number Description -002 Revised Extended Cycling Capability to 10K Block Erase Cycles 160K Block Erase Cycles per Chip Changed I Standby current spec PPS from Removed typical Block Erase times INTEL CORPORATION 2200 Mission College Blvd Santa Clara CA 95052 Tel (408) 765-8080 ...