pmwd18un-01 NXP Semiconductors, pmwd18un-01 Datasheet - Page 6

• Manufacturer Part Number: pmwd18un-01
• Description: Dual N-channel Mtrenchmos Ultra Low Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 14719
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R
(m )
(A)
I
DSon
D
100
12
80
60
40
20
8
4
0
0
T
function of drain-source voltage; typical values
T
of drain current; typical values
0
0
j
j
= 25 C
1.2
= 25 C
4.5
2.5
0.2
1.3
1.8
4
0.4
1.4
V
0.6
GS
(V) = 1.8
V
8
2.5
GS
(V) = 1.5
0.8
1.5
4.5
I
D
003aaa260
003aaa262
V
(A)
1.4
1.3
1.2
1.1
DS
(V)
12
1
Rev. 03 — 1 July 2005
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
Dual N-channel TrenchMOS ultra low level FET
(A)
I
a
D
1.5
0.5
10
8
6
4
2
0
2
1
0
T
function of gate-source voltage; typical values
-60
factor as a function of junction temperature
a
0
j
= 25 C and 150 C; V
=
----------------------------- -
R
DSon 25 C
R
DSon
0.5
0
T
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
j
= 150 C
60
1
DS
PMWD18UN
> I
D
25 C
120
R
1.5
DSon
V
03aa27
003aaa261
T
GS
j
( C)
(V)
180
2
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