pmwd18un-01 NXP Semiconductors, pmwd18un-01 Datasheet - Page 2

• Manufacturer Part Number: pmwd18un-01
• Description: Dual N-channel Mtrenchmos Ultra Low Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
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9397 750 14719
Product data sheet
Type number
PMWD18UN
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
Single device conducting.
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
Ordering information
Limiting values
Package
Name
TSSOP8
Description
plastic thin shrink small outline package; 8 leads; body width 4.4 mm
Conditions
25 C
25 C
T
T
T
T
T
T
sp
sp
sp
sp
sp
sp
Rev. 03 — 1 July 2005
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
T
T
j
j
150 C
150 C; R
GS
GS
Figure 1
= 4.5 V; see
= 4.5 V; see
Dual N-channel TrenchMOS ultra low level FET
p
p
GS
10 s; see
10 s
= 20 k
Figure 2
Figure 2
Figure 3
and
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
3
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PMWD18UN
Min
-
-
-
-
-
-
-
-
-
55
55
Max
30
30
10.6
6.8
42.2
4.2
+150
+150
3.5
14
12
Version
SOT530-1
2 of 12
Unit
V
V
V
A
A
A
W
A
A
C
C