pmwd18un-01 NXP Semiconductors, pmwd18un-01 Datasheet
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pmwd18un-01
Manufacturer Part Number
pmwd18un-01
Description
Dual N-channel Mtrenchmos Ultra Low Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1.PMWD18UN-01.pdf
(12 pages)
1. Product profile
2. Pinning information
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology.
Table 1:
Pin
1, 8
2, 3
4
5
6, 7
PMWD18UN
Dual N-channel TrenchMOS ultra low level FET
Rev. 03 — 1 July 2005
Surface mounting package
Very low threshold voltage
Portable appliances
Battery management
V
P
DS
tot
Description
drain (D)
source1 (S1)
gate1 (G1)
gate2 (G2)
source2 (S2)
4.2 W
30 V
Pinning
Simplified outline
SOT530-1 (TSSOP8)
8
1
Low profile
Fast switching
Personal Computer Memory Card
International Association (PCMCIA)
cards
Load switching
I
R
D
DSon
5
4
10.6 A
21.5 m
Product data sheet
Symbol
G1
S1
D
G2
S2
D
mbl600