pmwd18un-01 NXP Semiconductors, pmwd18un-01 Datasheet - Page 5

• Manufacturer Part Number: pmwd18un-01
• Description: Dual N-channel Mtrenchmos Ultra Low Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 14719
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
= 25 C unless otherwise specified.
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
see
V
V
V
V
see
V
I
see
V
see
V
R
I
I
V
D
D
D
S
S
DS
GS
GS
GS
GS
GS
DS
G
R
T
T
T
T
T
T
= 5 A; V
= 5 A; dI
= 250 A; V
= 1 mA; V
= 4 A; V
Rev. 03 — 1 July 2005
= 30 V
= 6
j
j
j
j
j
j
Figure 9
Figure 7
Figure 13
Figure 11
= 30 V; V
= 10 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 10 V; V
= 4.5 V; I
= 25 C
= 150 C
= 1.8 V; I
= 2.5 V; I
= 0 V; V
DS
GS
S
/dt = 100 A/ s; V
DS
DS
and
and
D
D
D
= 16 V; V
= 0 V; see
GS
L
GS
DS
= V
= 5 A; see
= 4.5 A;
= 5 A; see
= 10 ; V
= 16 V; f = 1 MHz;
= 0 V
= 0 V
10
8
Dual N-channel TrenchMOS ultra low level FET
= 0 V
GS
;
GS
Figure 12
GS
= 4.5 V;
Figure 7
Figure 7
= 4.5 V;
GS
= 0 V;
and
and
8
8
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
PMWD18UN
Min
30
27
0.45
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
0.7
-
-
-
18
31
24
20
24.7
2.2
6.4
1526 -
210
160
15
21
57
26
0.87
55
21
Max
-
-
-
1
100
100
21.5
37
35
23.5
-
-
-
-
-
-
-
-
-
1.2
-
-
5 of 12
Unit
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
A
A