pmwd18un-01 NXP Semiconductors, pmwd18un-01 Datasheet - Page 4
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pmwd18un-01
Manufacturer Part Number
pmwd18un-01
Description
Dual N-channel Mtrenchmos Ultra Low Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1.PMWD18UN-01.pdf
(12 pages)
Philips Semiconductors
5. Thermal characteristics
Table 4:
[1]
9397 750 14719
Product data sheet
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
th(j-sp)
th(j-a)
Mounted on a printed-circuit board; minimum footprint; vertical in still air.
Z
(K/W)
10
th(j-sp)
10
10
-1
2
1
10
thermal resistance from junction to solder point
thermal resistance from junction to ambient
-4
Thermal characteristics
= 0.5
0.2
0.05
0.02
0.1
single pulse
10
-3
10
-2
Rev. 03 — 1 July 2005
10
Conditions
see
-1
Figure 4
Dual N-channel TrenchMOS ultra low level FET
1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
10
PMWD18UN
P
Min
-
-
t
p
T
Typ
-
100
t
p
(s)
003aaa259
=
T
t
p
Max
30
-
t
10
2
4 of 12
Unit
K/W
K/W