fdd6670s Fairchild Semiconductor, fdd6670s Datasheet - Page 5

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fdd6670s

Manufacturer Part Number
fdd6670s
Description
30v N-channel Powertrench Syncfet
Manufacturer
Fairchild Semiconductor
Datasheet
Typical Characteristics
0 . 0 1
10
1 0 0
0.1
8
6
4
2
0
1 0
Figure 9. Maximum Safe Operating Area.
1
0
0.01
Figure 7. Gate Charge Characteristics.
0.001
0.01
I
D
0.1
R
SINGLE PULSE
=13.5A
0.0001
R
1
D S ( O N )
5
V
T
JA
GS
A
= 96
= 25
= 10V
LIMIT
10
o
o
C/W
C
0.1
V
D = 0.5
DS
0.2
0.1
0.05
, DRAIN-SOURCE VOLTAGE (V)
15
0.02
0.01
Q
g
, GATE CHARGE (nC)
SINGLE PULSE
0.001
20
DC
1
Figure 11. Transient Thermal Response Curve.
25
1 0 s
1s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
(continued)
30
10ms
V
D S
0.01
= 5V
1ms
10
35
1 0 0 s
15V
40
10V
45
100
0.1
t
1
, TIME (sec)
3600
3000
2400
1800
1200
600
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
5
V
Power Dissipation.
D S
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
C
C
C
t
1
RSS
ISS
OSS
, TIME (sec)
15
1
P(pk)
Duty Cycle, D = t
T
R
J
R
JA
- T
100
10
20
JA
(t) = r(t) * R
A
t
= 96 °C/W
1
= P * R
SINGLE PULSE
t
R
2
T
JA
V
f = 1MHz
A
GS
= 96°C/W
= 25°C
100
FDD6670S Rev E (W)
25
= 0 V
JA
1
JA
(t)
/ t
2
1000
1000
30

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