kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 59

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

2.8.9 Start Address1 Register F100h (R/W)
This Read/Write register describes the NAND Flash block address which will be loaded, programmed, or erased.
F100h, default = 0000h
NOTE 1) Bit 0 should be fixed ‘low’ at 2X Program and 2X Cache Program.
Start Address1 Information
2.8.10 Start Address2 Register F101h (R/W)
This Read/Write register describes the BufferRAM of DDP (Device BufferRAM Select)
F101h, default = 0000h
Start Address2 Information
In the case of writing Register, both registers in chip1 and chip2 will be written regardless of DBS. Reading out from Register of chip1/chip2
follows the DBS setting.
In using DDP chip, BootRAM of Chip 1 will always be selected regardless of DBS.
Reading and Writing on the DataRAM of DDP chip is different. Only the DataRAM selected by DBS will be written and read out.
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
DFS
DBS
15
15
Register Information
Register Information
14
14
DFS
DBS
FBA
Reserved(0000)
4Gb DDP
Device
13
13
2Gb
CE
12
12
11
11
DBS
DBS
DFS
DFS
CE
CE
10
10
DDP_OPT
GND
V
DDP_OPT
DD
Comp
Comp
Comp
Comp
9
9
CHIP 1
CHIP 2
BufferRAM and Register of DDP (Device BufferRAM Select)
Reserved(000000000000000)
Number of Block
8
8
Flash Core of DDP (Device Flash Core Select)
2048
4096
BUFFER
BUFFER
- 59 -
FLASH
FLASH
SRAM
CORE
SRAM
CORE
7
7
NAND Flash Block Address
INT
INT
6
6
Description
Description
*Comp = Comparator
INT
FBA
5
5
1)
4
4
DFS[15] & FBA[10:0]
3
3
FLASH MEMORY
FBA[10:0]
FBA
2
2
1
1
0
0