kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 12

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

2.5 Block Diagram
2.6 Memory Array Organization
The MuxOneNAND architecture integrates several memory areas on a single chip.
2.6.1 Internal (NAND Array) Memory Organization
The on-chip internal memory is a single-level-cell (SLC) NAND array used for data storage and code. The internal memory is divided into a
main area and a spare area.
Main Area
The main area is the primary memory array. This main area is divided into Blocks of 64 Pages. Within a Block, each Page is 2KB and is com-
prised of 4 Sectors. Within a Page, each Sector is 512B and is comprised of 256 Words.
Spare Area
The spare area is used for invalid block information and ECC storage. Spare area internal memory is associated with corresponding main area
memory. Within a Block, each Page has four 16B Sectors of spare area. Each spare area Sector is 8 words.
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
ADQ15~ADQ0
RDY
AVD
CLK
WE
INT
OE
CE
RP
(Address/Command/Configuration
BufferRAM
DataRAM1
DataRAM0
BootRAM
Internal Registers
/Status Registers)
Bootloader
- 12 -
StateMachine
Correction
Logic
Error
1st Block OTP
NAND Flash
(One Block)
(Block 0)
FLASH MEMORY
Array
OTP