kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 159

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

6.16 Block Erase Operation Timing
NOTE :
1) AA = Address of address register
2) For “In progress” and “complete” status, refer to status register.
3) Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
A/DQ15
A/DQ0:
CA = Address of command register
ECD = Erase Command
EMA = Address of memory to be erased
SA = Address of status register
AA* = Address of Start Address1 Register(for Flash Block Address)
PMB = DFS & FBA(Flash Block address) of memory to be programmed next time
AVD
RDY
CLK
WE
INT
OE
CE
bit
See AC Characteristics Tables 5.5, 5.7 and 5.9.
Hi-Z
t
CER
t
t
AAVDS
AVDP
AA
t
CS
V
IL
t
t
AAVDH
WPL
EMA
t
WC
Erase Command Sequence
t
WPH
t
WEA
CA
t
DS
ECD
t
CH
t
DH
- 159 -
t
CEZ
t
CER
t
BERS1
SA
Progress
In
Read Status Data
SA
Completed
t
CEZ
FLASH MEMORY
AA
*
PMB