kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 145

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

5.9 AC Characteristics for Load/Program/Erase Performance
NOTE :
1) These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.
2) Spare Load time is little bit less than Sector Load time.
3) Spare Program time is same as Sector program time.
4) 2/3 sector Load/Program time is between Sector Load/Progrma time and Page Load/Program time.
5.10 AC Characteristics for INT Auto Mode
5.11 AC Characteristics for Synchronous Burst Block Read
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Spare Load time(Note 1, Note2)
Sector Load time(Note 1)
Page Load time(Note 1)
Spare Program time(Note 1, Note3)
Sector Program time(Note 1)
Page Pogram time(Note 1)
OTP Access Time(Note 1)
Lock/Unlock/Lock-tight (Note 1)
All Block Unlock Time
Erase Suspend Time (Note 1)
Erase Resume Time(Note 1)
Number of Partial Program Cycles in the page (Including main
and spare area)
Block Erase time (Note 1)
Multi Block Erase Verify Read time(Note 1)
Command Input to INT Low
INT Low Period During Synch Burst Block Read
See Timing Diagrams 6.3, 6.4
See Timing Diagrams 6.11, 6.12, and 6.16
See Timing Diagrams 6.25
Parameter
Parameter
Parameter
2~64 Blocks
2~64 Blocks
1 Block
1 Block
Symbol
tBERS1
tBERS2
- 145 -
tPGM1
tPGM2
tLOCK
tERS1
tERS2
tRD1
tRD2
tOTP
tABU
tESP
tRD3
NOP
Symbol
Symbol
t
t
INTL
WB
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Min
1
-
Typ
205
220
500
500
400
1.5
1.5
23
30
70
2
4
4
-
FLASH MEMORY
Max
Max
200
-
Max
720
750
700
700
500
100
35
45
3
2
6
4
2
6
Unit
Unit
cycles
ns
us
Unit
ms
ms
ms
ms
µs
µs
µs
µs
ns
ns
µs
µs
µs