kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 124

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

OTP Block Program Operation Flow Chart
NOTE :
1) FBA(NAND Flash Block Address) could be omitted or any address.
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FBA should point the unlocked area address among NAND Flash Array address map.
4) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1.
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Write ‘OTP Access’ Command
Write 0 to interrupt register
Write ‘DFS*, FBA’ of Flash
Add: F100h DQ=DFS*, FBA
Write Data into DataRAM
Select DataRAM for DDP
Add: F241h DQ[15]=INT
Add: F241h DQ=0000h
Add: F220h DQ=0065h
Add: F101h DQ=DBS*
low to high transition
Add: DP DQ=Data-in
Wait for INT register
Completed?
Data Input
Start
* DBS, DFS is for DDP
2)
1)
4)
NO
Automatically
OTP Programming completed
Write ‘BSA, BSC’ of DataRAM
Write 0 to interrupt register
Add: F240h DQ[10]=0(Pass)
Add: F200h DQ=BSA, BSC
Add: F200h DQ=BSA, BSC
Add: F107h DQ=FPA, FSA
Write ‘FPA, FSA’ of Flash
checked
Write Program command
Add: F241h DQ[15]=INT
/NAND Flash Core reset
Add: F241h DQ=0000h
Add: F100h DQ=FBA
low to high transition
Wait for INT register
Write ‘FBA’ of Flash
DQ=0080h or 001Ah
Do Cold/Warm/Hot
Read Controller
Status Register
Add: F220h
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OTP
OTP Exit
L
=0?
YES
3)
4)
NO
DQ[14]=1(Lock), DQ[10]=1(Error)
Add: F240h DQ[10]=1(Error)
Add: F241h DQ[15]=INT
/NAND Flash Core reset
Automatically
low to high transition
Wait for INT register
Do Cold/Warm/Hot
updated
Update Controller
Read Controller
Status Register
Status Register
Add: F240h
OTP Exit
FLASH MEMORY