k4t51163qi-hpf7 Samsung Semiconductor, Inc., k4t51163qi-hpf7 Datasheet - Page 8

• Manufacturer Part Number: k4t51163qi-hpf7
• Description: 512mb I-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

5.0 DDR3 SDRAM Addressing
512Mb
* Reference information: The following tables are address mapping information for other densities.
256Mb
1Gb
2Gb
4Gb
K4T51163QI
Column Address/page size
Column Address
Column Address
Column Address
Column Address
Auto precharge
Auto precharge
Auto precharge
Auto precharge
Configuration
Configuration
Configuration
Configuration
Bank Address
Bank Address
Bank Address
Bank Address
Auto precharge
Row Address
Row Address
Row Address
Row Address
Configuration
Bank Address
Row Address
# of Banks
# of Banks
# of Banks
# of Banks
# of Banks
A0 ~ A9,A11
A0 ~ A9,A11
A0 ~ A9,A11
A0 ~ A9,A11
BA0 ~ BA2
BA0 ~ BA2
128Mb x4
256Mb x4
512Mb x4
A0 - A9,A11
A0 ~ A13
A0 ~ A12
A0 ~ A13
A0 ~ A14
BA0,BA1
64Mb x4
BA0,BA1
BA0 ~ BA2
A10/AP
A10/AP
A10/AP
A10/AP
A0 - A15
1 Gb x4
A10/AP
4
4
8
8
8
8 of 42
BA0 ~ BA2
BA0 ~ BA2
128Mb x 8
256Mb x 8
64Mb x 8
A0 ~ A13
32Mb x 8
A0 ~ A12
A0 ~ A13
A0 ~ A14
512Mb x 8
BA0 ~ BA2
BA0,BA1
BA0,BA1
A0 ~ A9
A0 ~ A9
A0 ~ A9
A0 ~ A9
A10/AP
A10/AP
A10/AP
A10/AP
A0 - A15
A10/AP
A0 - A9
4
4
8
8
8
Industrial
Rev. 1.0 August 2009
DDR2 SDRAM
128Mb x16
BA0 ~ BA2
BA0 ~ BA2
256Mb x16
BA0 ~ BA2
32Mb x16
16Mb x16
64Mb x16
BA0,BA1
A0 ~ A12
BA0,BA1
A0 ~ A12
A0 ~ A12
A0 ~ A13
A0 ~ A9
A0 ~ A8
A0 ~ A9
A0 ~ A9
A0 - A14
A10/AP
A10/AP
A10/AP
A10/AP
A10/AP
A0 - A9
4
4
8
8
8