k4t51163qi-hpf7 Samsung Semiconductor, Inc., k4t51163qi-hpf7 Datasheet - Page 29

• Manufacturer Part Number: k4t51163qi-hpf7
• Description: 512mb I-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T51163QI
V
V
Hold Slew Rate tangent line [ V
V
V
Rising Signal
V
V
IL(dc)
IL(ac)
DDQ
REF(dc)
IH(ac)
IH(dc)
DQS
DQS
max
max
min
min
V
Figure 11 - Illustration of tangent line for tDH (differential DQS, DQS)
SS
=
dc to V
dc to V
region
region
REF
REF
tDS
tangent
∆TR
REF(dc)
line
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Hold Slew Rate
Falling Signal
- Vil(dc)max ]
tDH
∆TR
=
nominal
tangent line [ Vih(dc)min - V
line
tDS
tangent
line
Industrial
∆TF
tDH
∆TF
nominal
line
REF(dc)
Rev. 1.0 August 2009
]
DDR2 SDRAM