k4t51163qi-hpf7 Samsung Semiconductor, Inc., k4t51163qi-hpf7 Datasheet - Page 12

• Manufacturer Part Number: k4t51163qi-hpf7
• Description: 512mb I-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

9.0 OCD default characteristics
Note :
1. Absolute Specifications (-40°C ≤ T
2. Impedance measurement condition for output source dc current: V
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage.
4. Slew rate measured from V
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaran-
teed by design and characterization.
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
7. DRAM output slew rate specification applies to 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is included in tDQSQ and tQHS specification.
K4T51163QI
Output impedance
Output impedance step size for OCD calibration
Pull-up and pull-down mismatch
Output slew rate
values of V
V
OUT
/Iol must be less than 23.4 ohms for values of V
OUT
between V
Description
DDQ
IL
(AC) to V
and V
CASE
DDQ
IH
≤ +95°C; V
(AC).
- 280mV. Impedance measurement condition for output sink dc current: V
(VOUT)
Output
DD
Parameter
OUT
= +1.8V ±0.1V, V
Sout
between 0V and 280mV.
12 of 42
DDQ
VTT
DDQ
= 1.7V; V
See full strength default driver characteristics
25 ohms
Min
1.5
0
0
= +1.8V ±0.1V)
on device operation specification
18ohm at nominal condition
OUT
Reference
Point
= 1420mV; (V
Nom
Industrial
OUT
-V
DDQ
)/Ioh must be less than 23.4 ohms for
Max
1.5
4
5
DDQ
Rev. 1.0 August 2009
= 1.7V; V
DDR2 SDRAM
ohms
ohms
ohms
Unit
V/ns
OUT
= 280mV;
1,4,5,6,7,8
Notes
1,2,3
1,2
6